VMO650-01F【PDF 1/2 页】MOSFET N-CH 100V 690A MODULE

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HiPerFET TM

VMO 650-01F

V DSS

= 100 V

MOSFET Module

N-Channel Enhancement Mode

I D25 = 690 A

R DS(on) = 1.8 m W

E 72873

Preliminary Data

Symbol

Test Conditions

Maximum Ratings

V DSS

V DGR

T J = 25 ° C to 150 ° C

T J = 25 ° C to 150 ° C; R GS = 10 k W

100

V GS

V GSM

I D25

I D80

Continuous

Transient

T S = 25 ° C

T S = 80 ° C

± 20

± 30

690

520

D = Drain S = Source

KS = Kelvin Source G = Gate

I DM

T S = 25 ° C

pulse width limited by T JM

2780

P D

T C = 25 ° C

T S = 25 ° C

2500

1740

Features

T J

T JM

T stg

-40 ...+150

150

-40 ... +125

° C

International standard package

D irect C opper B onded Al 2 O 3 ceramic

base plate

Isolation voltage 3600 V~

V ISOL

50/60 Hz

I ISOL ￡ 1 mA

t = 1 min

t=1s

3000

3600

Low R DS(on) HDMOS TM process

Low package inductance for high

speed switching

Kelvin Source contact for easy drive

M d

Mounting torque (M6)

Terminal connection torque (M5)

2.25-2.75/20-25 Nm/lb.in.

2.5-3.7/22-33 Nm/lb.in.

Applications

Weight

typical including screws

250

AC motor speed control for electric

vehicles

Symbol

V DSS

Test Conditions

V GS = 0 V, I D = 7 mA

Characteristic Values

(T J = 25 ° C, unless otherwise specified)

min. typ. max.

100

DC servo and robot drives

Switched-mode and resonant-mode

power supplies

DC choppers

V GS(th)

V DS = 20 V, I D = 130 mA

Advantages

I GSS

V GS = ± 20 V DC, V DS = 0

± 500 nA

Easy to mount

I DSS

V DS = 0.8 ? V DSS

V GS = 0 V

T J = 25 ° C

T J = 125 ° C

3.5 mA

14 mA

Space and weight savings

High power density

Low losses

R DS(on)

V GS = 10 V, I D = 0.5 ? I D25

Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %

1.8 m W

IXYS reserves the right to change limits, test conditions and dimensions.

1-2

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